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| DC COMPONENTS CO., LTD. R 2SA733 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier applicatioms. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IB PD TJ TSTG o C) Rating -60 -50 -5 -100 -20 250 +150 -55 to +150 Unit V V V mA mA mW o o Symbol .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -60 -50 -5 -0.55 90 100 2% Typ -0.18 -0.62 200 180 4.5 Max -0.1 -0.1 -0.3 -0.7 600 6 Unit V V V A A V V MHz pF Test Conditions IC=-100A, IE=0 IE=-1mA, IB=0 IE=-10A, IC=0 VCB=-60V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA IC=-1mA, VCE=-6V IC=-1mA, VCE=-6V IC=-10mA, VCE=-6V VCB=-10V, IE=0, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Volatge Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width VCE(sat) VBE(on) hFE fT Cob 380s, Duty Cycle Classification of hFE Rank Range R 90~180 Q 135~270 P 200~400 K 300~600 |
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